Deposition mechanism of oxide thin films on self-assembled organic monolayers

被引:89
|
作者
Shin, H [1 ]
Agarwal, M [1 ]
De Guire, MR [1 ]
Heuer, AH [1 ]
机构
[1] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
关键词
D O I
10.1016/S1359-6454(97)00258-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A mechanism for the deposition of oxide thin films from aqueous media at low temperatures onto functionalized organic self-assembled monolayers (SAMs) is proposed. TiO2 films deposited on sulfonate (SO3H-) SAMs on silicon consist of densely packed anatase crystallites, with a small quantity (10-20%) of amorphous TiO2. ZrO2-containing films deposited on SO3H-SAMs on silicon contain nanocrystallites of tetragonal zirconia and amorphous basic zirconium sulfate. Amorphous thin films of basic yttrium carbonate (which crystallize to cubic Y2O3 on subsequent healing) were deposited on SO3H-SAMs on silicon and also on bare silicon substrates. The proposed mechanism accounts for the formation of all of these films on the basis of aggregation processes between the deposition surface and the solid particles that are known to exist in the aqueous deposition medium. Estimates, calculated using DLVO theory, of the interaction energies between the SAM and the particles; and between the growing film and the particles, are consistent with the experimental observations. (C) 1998 Acta Metallurgica Inc.
引用
收藏
页码:801 / 815
页数:15
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