Fabrication of nanostructures in GaN

被引：6

作者：

Rong, B ^{[1
]}

Cheung, R

Gao, W

Kamp, M

机构：

[1] Univ Canterbury, Dept Elect & Elect Engn, Canterbury, New Zealand

[2] Univ Auckland, Dept Chem & Mat Engn, Auckland 1, New Zealand

[3] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany

来源：

MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(00)00347-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated wires and dots in the nanometre-scale in gallium nitride using electron beam lithography and reactive ion etching (RIE). The influence of N-2 content in the SF6/N-2 plasma on the etching characteristics has been studied using scanning electron microscopy and atomic force microscopy. Results indicate that the addition of N-2 in the gas mixture increases the etch rate, changes the etched profile to more vertical and smoothens the surface roughness microscopically.

引用

页码：419 / 422

页数：4

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