Fabrication of nanostructures in GaN

被引：6
|
作者：
Rong, B [1 ]
Cheung, R
Gao, W
Kamp, M
机构：
[1] Univ Canterbury, Dept Elect & Elect Engn, Canterbury, New Zealand
[2] Univ Auckland, Dept Chem & Mat Engn, Auckland 1, New Zealand
[3] Univ Ulm, Dept Optoelect, D-89069 Ulm, Germany
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00347-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated wires and dots in the nanometre-scale in gallium nitride using electron beam lithography and reactive ion etching (RIE). The influence of N-2 content in the SF6/N-2 plasma on the etching characteristics has been studied using scanning electron microscopy and atomic force microscopy. Results indicate that the addition of N-2 in the gas mixture increases the etch rate, changes the etched profile to more vertical and smoothens the surface roughness microscopically.
引用
收藏
页码：419 / 422
页数：4
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