Nature of yellow luminescence band in GaN grown on Si substrate

被引：19

作者：

Ito, Shogo ^{[1
]}

Nakagita, Taihei ^{[1
]}

Sawaki, Nobuhiko ^{[1
]}

Ahn, Hyung Soo ^{[2
]}

Irie, Masashi ^{[3
,4
]}

Hikosaka, Toshiki ^{[3
,4
]}

Honda, Yoshio ^{[3
,4
]}

Yamaguchi, Masahito ^{[3
,4
]}

Amano, Hiroshi ^{[3
,4
]}

机构：

[1] Aichi Inst Technol, Dept Elect & Elect Engn, Toyota, Aichi 4700392, Japan

[2] Korea Maritime & Ocean Univ, Dept Appl Sci, Pusan 606791, South Korea

[3] Nagoya Univ, Dept Elect, Nagoya, Aichi 4648603, Japan

[4] Nagoya Univ, Akasaki Res Ctr, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 11期

关键词：

DOPED GAN; PHOTOLUMINESCENCE; CARBON; EPITAXY; MECHANISM; SILICON;

D O I：

10.7567/JJAP.53.11RC02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-optical-quality GaN was grown on a (111) Si substrate by metal-organic vapor phase epitaxy using an AlInN buffer layer and an indium doped AlN nucleation layer. The photoluminescence spectra at room temperature showed a strong and narrow edge-emission peak and weak defect-related emission bands. We found four spectral peaks in the green and yellow luminescence bands at G(0): 514.5 nm (2.410 eV), G(1): 546.5nm (2.269 eV), Y-1: 553.5nm (2.240 eV), and Y-0: 584.5nm (2.121 eV), independent of the growth methods/conditions. The results suggest that the emission is associated with an intrinsic defect such as a Ga vacancy. (C) 2014 The Japan Society of Applied Physics

引用

页数：5

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