Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

被引：26

作者：

Xu, HZ ^{[1
]}

Bell, A

Wang, ZG

Okada, Y

Kawabe, M

Harrison, I

Foxon, CT

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[4] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 222卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

gallium nitride; metalorganic vapor-phase epitaxy; photoluminescence; yellow luminescence;

D O I：

10.1016/S0022-0248(00)00927-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Undoped GaN epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (MOVPE) in a horizontal-type low-pressure two-channel reactor. Photoluminescence (PL) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (UV) and defect-related yellow luminescence (YL) has been extensively investigated, It is revealed that the ratio of the UV-to-YL peak intensities depends strongly on the excitation intensity and the measurement temperature. The obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：96 / 103

页数：8

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