Morphology-controlled synthesis of nanostructured silicon carbide

被引:0
|
作者
Guo, XY [1 ]
Jin, GQ [1 ]
Hao, YJ [1 ]
机构
[1] Chinese Acad Sci, Inst Coal Chem, State Key Lab Coal Convers, Taiyuan 030001, Peoples R China
关键词
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Phenolic resin and tetraethoxysilane were used to prepare a binary carbonaccous silicon xerogel, the precursor of silicon carbide (SiC). By employing different additives in the sol-gel process, a series of xerogel precursors with differently chemical composition were obtained. Heating these xerogels to 1250degreesC, nanostructured beta-SiC with various morphologies including nanowires, nanofibers, nanoparticles and mesoporous SiC were produced via carbothermal reduction. The preparation method of the xerogels was presented and the influences of different additives on the sol-gel process and the SiC formation were discussed in this paper.
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页码:77 / 82
页数:6
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