Abnormal Raman spectral phenomenon of silicon nanowires

被引：5
|
作者：
Ding, W [1 ]
Li, LY [1 ]
Li, BB [1 ]
Zhang, SL [1 ]
机构：
[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
来源：
CHINESE SCIENCE BULLETIN | 2000年 / 45卷 / 15期
关键词：
nano-scale materials; Raman spectroscopy; quantum confinement effect; resonance Raman scattering;
D O I：
10.1007/BF02886234
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
The Raman spectra of two one-dimensional silicon nanowire samples with different excitation wavelengths were measured and an abnormal phenomenon was discovered that the Raman spectral features change with the wavelengths of excitation. Closer analysis of the crystalline structure of samples and the changes in Raman spectral features showed that the abnormal behavior is the result of resonance Raman scattering selection effect.
引用
收藏
页码：1351 / 1354
页数：4
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