Influence of (Ag-Cu) co-doping on the optical, structural, electrical, and morphological properties of ZnO thin films

被引:21
|
作者
Alqadi, M. K. [1 ]
Migdadi, A. B. [1 ]
Alzoubi, F. Y. [1 ]
Al-Khateeb, H. M. [1 ]
Almasri, Ahmad A. [1 ]
机构
[1] Jordan Univ Sci & Technol, Dept Phys Sci, POB 3030, Irbid 22110, Jordan
关键词
Ag-Cu co-doped ZnO films; Dispersion energy; Density of state; Plasma frequency; Sheet resistance; Conductivity; PHYSICAL-PROPERTIES; BAND-GAP; TEMPERATURE;
D O I
10.1007/s10971-022-05785-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this research, ZnO thin films with different co-doping levels of Ag-Cu were successfully manufactured using the sol-gel method by immersing technique. The impact of (Ag-Cu) co-doping on ZnO films' structural, morphology, optical, and electrical properties was investigated. XRD patterns revealed all films have crystalline nature with a hexagonal structure. The transmittance (7) and reflectance (R) spectra were employed to estimate numerous optical parameters; the refractive index (n) was also profoundly analyzed to evaluate dispersion parameters and other optoelectronic parameters. We found that adding Ag-Cu as a co-doping in ZnO films enhanced the electrical conductivity, where the band gap energy and sheet resistance are decreased. The results reported in this work may pave the way to manufacture thin films whose optical and electrical properties could be modified. Also, these composite films could be necessary for the fabrication of multifunctional modern optoelectronic and photovoltaic devices. [GRAPHICS] .
引用
收藏
页码:319 / 334
页数:16
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