A Modified Diffusion Model for I-V Properties of Schottky Contacts to High Resistivity Semiconductors

被引：0

作者：

Wang, Ning ^{[1
]}

Jie, Wanqi ^{[1
]}

Xu, Lingyan ^{[1
]}

Zha, Gangqiang ^{[1
]}

Zhou, Yan ^{[1
]}

Xu, Yadong ^{[1
]}

Wang, Tao ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Shaanxi, Peoples R China

来源：

2013 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC) | 2013年

关键词：

DETECTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a model to describe I-V properties of Schottky contacts to high resistivity semiconductors, such as CdTe, CdZnTe, TlBr and so on, when depletion region width is less than the crystal thickness. Effects of non-depletion region on dark current are considered in this model. I-V curves of CdZnTe radiation detectors are fitted quite well with this model. Space charge concentration, barrier height and energy difference between conduction band bottom and Femi Level can also be obtained easily. Furthermore, we use TCAD simulation to explain the fitted parameters.

引用

页数：5

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