Novel etchings to transfer CVD-grown graphene from copper to arbitrary substrates

被引：14
|
作者：
Lavin-Lopez, M. P. [1 ]
Valverde, J. L. [2 ]
Garrido, A. [1 ]
Sanchez-Silva, L. [2 ]
Martinez, P. [1 ]
Romero-Izquierdo, A. [1 ]
机构：
[1] Graphenano Nanotechnol, Alicante 03540, Spain
[2] Univ Castilla La Mancha, Dept Chem Engn, E-13071 Ciudad Real, Spain
来源：
CHEMICAL PHYSICS LETTERS | 2014年 / 614卷
关键词：
LARGE-AREA GRAPHENE; FEW-LAYER GRAPHENE; MONOLAYER GRAPHENE; RAMAN-SPECTROSCOPY; SCALE SYNTHESIS; FILMS;
D O I：
10.1016/j.cplett.2014.09.019
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Novel and simple etchings for direct transfer of CVD-grown graphene on Cu to arbitrary substrates are reported in this paper. Besides the classical transfer method using FeCI3, two novel etching solutions have been used for depositing graphene over different substrates: HF:2Na(2)CO(3)center dot 3H(2)O(2) (4:1) and H2O2 (30% p./v.):aqua Regis (1HNO(3):3HCl): H2O (1:1:2). By using these etching solutions, graphene was firstly transferred to PET wafers and then to arbitrary substrates (microscope slides). The resulting materials were analyzed and discussed in detail using Raman Spectroscopy. (C) 2014 Elsevier RV. All rights reserved.
引用
收藏
页码：89 / 94
页数：6
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