Properties of the ZnO/PS nanocomposites obtained by sol-gel method

被引：0

作者：

Cai, Hong ^{[1
]}

Shen, Honglie ^{[1
]}

Lu, Linfeng ^{[1
]}

Huang, Haibin ^{[1
]}

Tang, Zhengxia ^{[1
]}

Yin, Yugang ^{[1
]}

Shen, Jiancang ^{[2
,3
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Engn, Nanjing 210016, Peoples R China

[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

来源：

OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2010年 / 4卷 / 05期

关键词：

ZnO films; Porous silicon; Sol-gel; C-axis orientation; Luminescence; POROUS SILICON; QUANTUM DOTS; ZINC-OXIDE; THIN-FILMS; PHOTOLUMINESCENCE; ORIENTATION; LUMINESCENCE; EMISSION; ORIGIN;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work we investigated the ZnO/PS nanocomposite films. The porous silicon (PS) substrates were formed by electrochemical anodization from p-type (100) silicon wafer, and the starting material for ZnO was Zinc acetate. The ZnO thin films were deposited on the PS substrate with different porosities by sol-gel spin coating technique. XRD analysis revealed that highly (002) oriented ZnO thin films were formed. The photoluminescence (PL) measurements on the ZnO/PS nanocomposite films showed three intense broadband photoluminescence emissions at around similar to 380 nm, similar to 510 nm, and similar to 750 nm. The effects of the PS substrate on the PL properties were also studied in detail.

引用

页码：650 / 653

页数：4

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