Properties of ZnO:Al thin films, obtained by the sol-gel method

被引：3
|
作者：
Altamirano-Juarez, DC
Castanedo-Perez, R
Jimenez-Sandoval, O
Jimenez-Sandoval, S
Marquez-Marin, J
Torres-Delgado, G
Maldonado-Alvarez, A
机构：
[1] Univ Queretaro, Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Queretaro 76001, Mexico
[2] Inst Politecn Nacl, Ctr Invest & Estudios Avanzados, Dept Ingn Elect, Mexico City 07300, DF, Mexico
来源：
MODERN PHYSICS LETTERS B | 2001年 / 15卷 / 17-19期
关键词：
D O I：
10.1142/S0217984901002403
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
M-doped ZnO thin films have been prepared by the sol-gel technique, on slide-glass substrates. Al(NO3)(3). 9H(2)O was used as aluminum source and the doping range was 0.001-20 at%. The effect of the Al concentration in solution on the microstructure of the films is presented. The transmittance spectra, as well as the sheet resistance measurements, show the presence of electrically-active aluminum in the films.
引用
收藏
页码：730 / 732
页数：3
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