Graphene Field Effect Transistors with Mica as Gate Dielectric Layers

被引：27

作者：

Low, Chong Guan ^{[1
]}

Zhang, Qing ^{[1
]}

Hao, Yufeng ^{[2
,3
]}

Ruoff, Rodney S. ^{[2
,3
]}

机构：

[1] Nanyang Technol Univ, NOVITAS, Nanoelect Ctr Excellence, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Texas Austin, Dept Mech Engn, Austin, TX 78712 USA

[3] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

来源：

SMALL | 2014年 / 10卷 / 20期

关键词：

SCANNING-TUNNELING-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; ELECTRONIC TRANSPORT; HIGH-QUALITY; SPECTROSCOPY; PERFORMANCE; CONSTANT; WATER;

D O I：

10.1002/smll.201303929

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Chemical vapor deposited monolayer graphene is transferred onto atomically flat and ultra-thin muscovite mica to study the transport characteristics of graphene with a test structure of mica-based graphene field effect transistor (GFET). The transfer curve of the 24 nm mica-based GFET shows an effective carrier mobility of 2748 cm(2)/Vs and a transconductance of 3.36 S, a factor of 2 and 7 larger than those values obtained from 40 nm SiO2 based GFET, respectively. The results demonstrate that mica is an excellent gate dielectric material due to its high dielectric constant, high dielectric strength, and atomically flat surface.

引用

页码：4213 / 4218

页数：6

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