Infrared defect dynamics: He irradiation induced complexes in high-quality silicon crystal

The behavior of radiation-induced complexes in MCZ sillicon crystal alter Ile irradiation was studied by highly sensitive and accurate infrared absorption spectroscopy. Samples from the same crystal that was used in the electron irradiation were employed. Many absorption lines with peak absorbance as small as 10 6 were successfully detected. Most of them Were the same as those that had been observed in the electron irradiated samples and reported in the previous papers. Not only C-rich type complexes such as C,O, and ICiOi,, but also C-lean type complexes such as I2O2, and IO3-,, were (Amer\ ed. in contrast to the electron case Where only (1-rich type had been observed in the same crystal. Peak absorbances 14 the Ile case are about half of those in the electron case. The Ile dose was of the electron dose of 10(16)cm(2). Thus. the complex production rate per particle in the Ile case Was about 100 Limes as large as that for electrons. The production range in the Ile case was restricted to within 20 microns from the surface. This range amounted to about 1/100 of that observed in the electron case where complexes had been formed uniformly throughout the 2 mm thick sample. Also, therefore, the complex concentration in the layer Was 100 times higher than that in the electron case. The annealing behavior of complexes Was essentially the same as that in the electron case with minor dIllevences. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim