Tuning residual stress in 3C-SiC(100) on Si(100)

被引：8

作者：

Pezoldt, Joerg ^{[1
]}

Stauden, Thomas ^{[1
]}

Niebelschuetz, Florentina ^{[1
]}

Alsioufy, Mohamad Adnan ^{[1
]}

Nader, Richard ^{[2
]}

Masri, Pierre ^{[2
]}

机构：

[1] Inst Mikro & Nanotechnol, FG Nanotechnol, Postfach 100565, D-98684 Ilmenau, Germany

[2] Univ Montpellier 2, CNRS, GrpEtude Semicond, UMR 5650, F-34095 Montpellier, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

heteroepitaxy; stress; strain; FTIR-ellipsometry; 3C-SiC; silicon; germanium; LAYERS; SI; HETEROSTRUCTURES; GROWTH; STRAIN; FILMS; MEMS;

D O I：

10.4028/www.scientific.net/MSF.645-648.159

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Germanium modified silicon surfaces in combination with two step epitaxial growth technique consisting in conversion of the Si(100) substrate near surface region into 3C-SiC(100) followed by an epitaxial growth step allows the manipulation of the residual strain. The morphology and the residual strain in dependence on the Ge coverage are only affected by the Ge quantity and not by the growth technique. The positive effect of the Ge coverage is attributed to changes in the morphology during the conversion process, as well as to a reduced lattice and thermal mismatch between SiC and Si in consequence of alloying the near surface region of the Si substrate with Ge.

引用

页码：159 / +

页数：2

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