A 200-325-GHz Wideband, Low-Loss Modified Marchand Balun in SiGe BiCMOS Technology

被引：0

作者：

Ahmed, Faisal ^{[1
]}

Furqan, Muhammad ^{[1
]}

Stelzer, Andreas ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Inst Commun Engn & RF Syst, Altenberger Str 69, A-4040 Linz, Austria

来源：

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年

关键词：

Marchand balun; SiGe BiCMOS; millimeter-wave and submillimeter wave; edge-coupled line; directional couplers; BROAD-BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A modified version of the Marchand balun based on three folded symmetric coupled lines is presented in this paper. The S-parameters of a quasi-TEM coupler are derived in the case when even-and odd-mode phase velocities are unequal. The effects on the performance of the Marchand balun are then investigated by analyzing its calculated S-paramaters under different phase-velocity-ratios of both the modes. Measurements show a minimum insertion loss of 2.3 dB, and a 1-dB insertion loss bandwidth from 200 325 GHz. The amplitude imbalance is less than 1.5 dB upto 325 GHz, while the phase imbalance is below 10 deg upto 273 GHz. Through out the operating range the input return loss remains higher than 15 dB. The balun is fabricated in a 130 nm SiGe BiCMOS process and occupies only 0.015 mm(2), excluding the pads.

引用

页码：40 / 43

页数：4

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