Prism coupling as a non destructive tool for optical characterization of (Al,Ga) nitride compounds

被引：0
|
作者：
Dogheche, E
Belgacem, B
Remiens, D
Ruterana, P [1 ]
Omnes, F
机构：
[1] Univ Valenciennes & Hainuat Cambresis, Lab Mat Avances Ceram, F-59342 Valenciennes, France
[2] ISMRA Univ Caen, CNRS, Lab Etud & Rech Mat, F-14050 Caen, France
[3] CNRS, Ctr Rech Heteroepitaxie & Applicat, F-06560 Valbonne, France
来源：
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH | 2000年 / 5卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An optical characterization technique is proposed for GaN based compounds deposited on sapphire. In AlGaN films grown by MOCVD, the film optical behavior and the substrate to layer interface are qualified from the measured optical data. The experimental and theoretical approach used for this purpose is described in detail. The results clearly show bending effects at the interface which may be related to structural defects; a good agreement with transmission electronic microscopy analysis is obtained.
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页数：6
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