Minibands in semiconductor superlattices modelled as Dirac combs (significance of band non-parabolicity)

被引:0
|
作者
Bezák, V [1 ]
机构
[1] Comenius Univ, Fac Math & Phys, Dept Solid State Phys, Bratislava 84248, Slovakia
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A generalization of the Kronig-Penney problem is put forward with the potential energy V(x) = gamma Sigma(j) delta(x - ja), gamma > 0. A periodic multi-layer ... ABABABA ... is considered: layers A of thickness a are intercalated between layers B of much smaller thickness. In this superlattice, A and B symbolize, respectively, narrow-gap semiconductor layers and barrier layers. The conduction band of the semiconductor A is defined by the dispersion function E(k) which was derived in the Kane two-band theory. Owing to the non-zero value of the parameter gamma, the electron energies inside the interval corresponding to the conduction band of the semiconductor A are organized in minibands separated by forbidden gaps. With E(k) taken in the Kane form, the dispersion law epsilon = E(k) is non-parabolic if E-g (the width of the forbidden gap of the semiconductor A) is finite. This non-parabolicity affects the positions and widths of the minibands. If E-g tends to infinity, the original Kronig-Penney problem is recovered. If E-g decreases, the density of the minibands increases.
引用
收藏
页码:49 / 59
页数:11
相关论文
共 50 条
  • [1] Band warping, band non-parabolicity, and Dirac points in electronic and lattice structures
    Resca, Lorenzo
    Mecholsky, Nicholas A.
    Pegg, Ian L.
    PHYSICA B-CONDENSED MATTER, 2017, 522 : 66 - 74
  • [2] ON NON-PARABOLICITY OF CONDUCTION BAND IN HGTE
    SZYMANSK.W
    SNIADOWE.L
    GIRIAT, W
    PHYSICA STATUS SOLIDI, 1965, 10 (01): : K11 - &
  • [3] THE EFFECT OF BAND NON-PARABOLICITY ON SHALLOW DONORS
    WANG, CY
    PAN, DS
    SOLID STATE COMMUNICATIONS, 1982, 43 (04) : 287 - 289
  • [4] EFFECT OF BAND NON-PARABOLICITY ON THE GENERALIZED EINSTEIN RELATION FOR A SEMICONDUCTOR SUPER-LATTICE
    CHAKRAVARTI, AN
    GHATAK, KP
    GHOSH, KK
    RAO, GB
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 111 (01): : K61 - K65
  • [5] MOMENTUM MIXING ENHANCEMENT OF BAND NON-PARABOLICITY IN GAAS-GA1-XALXAS SUPERLATTICES
    BROWN, LDL
    JAROS, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (01) : 40 - 47
  • [6] Effect of the in-plane energy, screening parameter, and non-parabolicity on the parallel relaxation time in semiconductor superlattices
    Abouelaoualim, D
    Elhabti, DA
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2004, 3-4 : 59 - 72
  • [7] VALENCE BAND AVERAGES IN SILICON - ANISOTROPY AND NON-PARABOLICITY
    HUMPHREYS, RG
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (21): : 2935 - 2942
  • [8] INFLUENCE OF THE BAND NON-PARABOLICITY ON THE AMPLIFICATION OF HYPERSOUND IN SEMICONDUCTORS
    LEDOV, VA
    SHERMERGOR, TD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1050 - 1051
  • [9] NON-PARABOLICITY OF CONDUCTION-BAND OF CADMIUM PHOSPHIDE
    RADAUTSAN, SI
    ARUSHANOV, EK
    NATEPROV, AN
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 23 (01): : K59 - K61
  • [10] Numerical computation of pyramidal quantum dots with band non-parabolicity
    Gong Liang
    Shu Yong-chun
    Xu Jing-jun
    Wang Zhan-guo
    SUPERLATTICES AND MICROSTRUCTURES, 2013, 61 : 81 - 90