Bulk electronic properties of V2O3 probed by hard X-ray photoelectron spectrosscopy

被引:11
|
作者
Panaccione, G.
Sacchi, M.
Torelli, P.
Offi, F.
Cautero, G.
Sergo, R.
Fondacaro, A.
Henriquet, C.
Huotari, S.
Monaco, G.
Paolasini, L.
机构
[1] INFM, CNR, TASC Lab, I-34012 Trieste, Italy
[2] Univ Paris 06, Lab Chim Phys Mat & Rayonnement, UMR 7614, F-75005 Paris, France
[3] INFM, CNR, Natl Res Ctr, I-41100 Modena, Italy
[4] CNISM, I-00146 Rome, Italy
[5] Univ Roma 3, Dipartimento Fis, I-00146 Rome, Italy
[6] Sincrotrone Trieste, I-34012 Trieste, Italy
[7] European Synchrotron Radiat Facil, F-38042 Grenoble 9, France
关键词
photoemission spectroscopy; electronic properties; strongly correlated systems;
D O I
10.1016/j.elspec.2006.11.050
中图分类号
O433 [光谱学];
学科分类号
0703 ; 070302 ;
摘要
We have measured bulk sensitive photoemission spectra of pure vanadium sesquioxide (V2O3) in its metallic phase as a function of different surface preparations. We observe the presence of a clear coherent peak in the vicinity of the Fermi level and of satellites intensities at the V 2p core level. After scraping, the coherent intensities are almost completely suppressed in both core level and valence band. Our results suggest a remarkable change of the screening properties in strongly correlated systems when going from the surface to the volume. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:64 / 67
页数:4
相关论文
共 50 条
  • [41] Resonant soft X-ray emission spectroscopy of V2O3, VO2 and NaV2O5
    Schmitt, T
    Duda, LC
    Augustsson, A
    Guo, JH
    Nordgren, J
    Downes, JE
    McGuinness, C
    Smith, KE
    Dhalenne, G
    Revcolevshci, A
    Klemm, M
    Horn, S
    SURFACE REVIEW AND LETTERS, 2002, 9 (02) : 1369 - 1374
  • [42] BULK BAND DISPERSION IN TI2O3 AND V2O3
    SMITH, KE
    HENRICH, VE
    PHYSICAL REVIEW B, 1988, 38 (09): : 5965 - 5975
  • [44] Optical properties and electronic structure of V2O5, V2O3 and VO2
    Krystyna Schneider
    Journal of Materials Science: Materials in Electronics, 2020, 31 : 10478 - 10488
  • [45] Influence of strain on the electronic properties of epitaxial V2O3 thin films
    Schuler, H
    Klimm, S
    Weissmann, G
    Renner, C
    Horn, S
    THIN SOLID FILMS, 1997, 299 (1-2) : 119 - 124
  • [46] Charge correlation in V2OPO4 probed by hard x-ray photoemission spectroscopy
    Murota, Kota
    Pachoud, Elise
    Attfield, J. Paul
    Glaum, Robert
    Yasuda, Tatsunori
    Ootsuki, Daiki
    Takagi, Yasumasa
    Yasui, Akira
    Khomskii, Daniel, I
    Mizokawa, Takashi
    PHYSICAL REVIEW B, 2020, 101 (23)
  • [47] Electronic structure and thermodynamics of V2O3 polymorphs
    Wessel, C.
    Reimann, C.
    Mueller, A.
    Weber, D.
    Lerch, M.
    Ressler, T.
    Bredow, T.
    Dronskowski, R.
    JOURNAL OF COMPUTATIONAL CHEMISTRY, 2012, 33 (26) : 2102 - 2107
  • [48] Mesoscopic electronic heterogeneities in the transport properties of V2O3 thin films
    Grygiel, C.
    Pautrat, A.
    Sheets, W. C.
    Prellier, W.
    Mercey, B.
    Mechin, L.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (47)
  • [49] Communication: The electronic structure of matter probed with a single femtosecond hard x-ray pulse
    Szlachetko, J.
    Milne, C. J.
    Hoszowska, J.
    Dousse, J. -Cl.
    Blachucki, W.
    Sa, J.
    Kayser, Y.
    Messerschmidt, M.
    Abela, R.
    Boutet, S.
    David, C.
    Williams, G.
    Pajek, M.
    Patterson, B. D.
    Smolentsev, G.
    van Bokhoven, J. A.
    Nachtegaal, M.
    STRUCTURAL DYNAMICS-US, 2014, 1 (02):
  • [50] Effects of stacking configuration on the electronic and topological properties of V2O3 bilayers
    Wang, Zheng
    Yan, Jingshen
    Chen, Kaixuan
    Lyu, Shu-Shen
    PHYSICAL REVIEW B, 2025, 111 (08)