Effects of deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films

Deposition temperature and annealing conditions have pronounced effects on the structure and electrical properties of LPCVD silicon thin films. Films grown at 580 degrees C are amorphous whereas those grown at 620 degrees C are microcrystalline. All thin films are subjected to phosphorous diffusion followed by different annealing treatments. Annealing of amorphous films at 1000 degrees C results in large grains with no favoured orientation and with a relatively high mobility value. Annealing treatment at 1000 degrees C of the microcrystalline sample results in moderate grain growth with a relatively low mobility which presumably is due to some favoured grain orientation. (C) 2000 Kluwer Academic Publishers.