Characteristics of the ground-state lasing operation in V-groove quantum-wire lasers

被引:15
|
作者
Kim, TG [1 ]
Wang, XL
Suzuki, Y
Komori, K
Ogura, M
机构
[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
[2] New Energy & Ind Technol Dev Org, NEDO, Tokyo 1706027, Japan
关键词
gain-switched lasers; ground-state lasing operation; quantum-wire lasers; semiconductor lasers; short pulse generation; V-groove substrates;
D O I
10.1109/2944.865106
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Lasing from the ground subband transition, which has long been attempted in one-dimensional (1-D) structures, has been achieved for the first time with vertically stacked, AlGaAs-GaAs multiple quantum-wire (QWR) lasers, fabricated by flow-rate modulation epitaxy on V-groove substrates, Direct experimental evidence is provided by the consistency of the photon energies of the lasing and photoluminescence peaks, in the temperature range 4.5 K-300 K, It is further ensured by numerical calculation of the electronic subband energy states with the corresponding QWR structure. The lasers with cavity lengths of 350 mu m, show fundamental transverse mode, typical threshold current of 5 mA, an internal quantum efficiency of 18.5%, ultrahigh characteristic temperature T-o similar to 322 K above room temperature, and remarkably low wavelength-tuning rates of current (<0.012 nm/mA) and temperature (<0.19 nm/degrees C). Ultrafast lasing behaviors at the ground (n = 1) and the second (n = 2) transition of the QWR are also investigated in terms of the gain-switching method, using a characteristic of the wavelength shift from the n = 1 to the n. = 2 subband with shortening the cavity length.
引用
收藏
页码:511 / 521
页数:11
相关论文
共 50 条
  • [41] Influence of long-range substrate roughness on disorder in V-groove quantum wire structures
    Reichardt, H.
    Leifer, K.
    Pelucchi, E.
    Karlsson, K.F.
    Weman, H.
    Rudra, A.
    Kapon, E.
    Journal of Applied Physics, 2006, 100 (12):
  • [42] Understanding Ground-State Quenching in Quantum-Dot Lasers
    Roehm, Andre
    Lingnau, Benjamin
    Luedge, Kathy
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (01) : 1 - 11
  • [43] Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    Yu. M. Shernyakov
    M. V. Maksimov
    A. E. Zhukov
    A. V. Savelyev
    V. V. Korenev
    F. I. Zubov
    N. Yu. Gordeev
    D. A. Livshits
    Semiconductors, 2012, 46 : 1331 - 1334
  • [44] Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers
    Shernyakov, Yu. M.
    Maksimov, M. V.
    Zhukov, A. E.
    Savelyev, A. V.
    Korenev, V. V.
    Zubov, F. I.
    Gordeev, N. Yu.
    Livshits, D. A.
    SEMICONDUCTORS, 2012, 46 (10) : 1331 - 1334
  • [45] REALIZATION OF CRESCENT-SHAPED SIGE QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY
    USAMI, N
    MINE, T
    FUKATSU, S
    SHIRAKI, Y
    APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2789 - 2791
  • [46] Effect of pressure on intersubband optical absorption coefficients and refractive index changes in a V-groove quantum wire
    Khordad, R.
    Khaneghah, S. Kheiryzadeh
    Masoumi, M.
    SUPERLATTICES AND MICROSTRUCTURES, 2010, 47 (04) : 538 - 549
  • [47] Fabrication of V-grooved inner stripe GaAs-AlGaAs quantum-wire lasers
    Kim, TG
    Hwang, SM
    Kim, EK
    Min, SK
    Jeon, JI
    Leem, SJ
    Jeong, J
    Park, JH
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) : 274 - 276
  • [49] Optical emission from a V-groove quantum wire laser diode immersed in high magnetic fields
    Sirigu, L
    Weman, H
    Karlsson, KF
    Oberli, DY
    Rudra, A
    Kapon, E
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 13 (2-4): : 881 - 884
  • [50] High to operation of 1590 nm GaInAsP/InP quantum-wire DFB lasers by Bragg wavelength detuning
    Nishimoto, Yoshifumi
    Yagi, Hideki
    Miura, Koji
    Plumwongrot, Dhanorm
    Ohira, Kazuya
    Maruyama, Takeo
    Arai, Shigehisa
    2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS, 2006, : 123 - +