Electrical transport through crossed carbon nanotube junctions

被引:19
|
作者
Park, JW
Kim, J
Yoo, KH [1 ]
机构
[1] Yonsei Univ, Atom Scale Surface Res Ctr, Seoul 120749, South Korea
[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[3] Korea Res Inst Stand & Sci, Elect Devices Grp, Taejon 305600, South Korea
[4] Chonbuk Natl Univ, Dept Phys, Chonju 561756, South Korea
关键词
D O I
10.1063/1.1554751
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the electrical transport properties through crossed nanotube junction between two metallic single-walled carbon nanotubes. Depending on the temperature range, the crossed junction exhibits different behaviors. At high temperatures, the crossed junction acts as a tunneling junction and its conductance shows a power-law dependence on the temperature, Gproportional toT(alpha), with alphaapproximate to1. At low temperatures, however, it exhibits different behaviors from the tunnel junction, suggesting the formation of localized states at the crossing. We have also measured the gate-voltage dependence for the crossed junctions and observed quasiperiodic oscillations supporting the existence of localized states formed at the junction. (C) 2003 American Institute of Physics.
引用
收藏
页码:4191 / 4193
页数:3
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