Investigation of RF performance of nano-scale ultra-thin-body Schottky-Barrier MOSFETs using Monte Carlo simulation

A Monte Carlo investigation of the dynamic performance of nano-scale ultra-thin-body (UTB) Schottky-Barrier MOSFETs (SB-MOSFETs) is presented. A thorough account of how the gate voltage and SB barrier height affect the RF performance of UTB SB-MOSFETs is elaborated. The UTB SB-MOSFET offers excellent RF performance with high values of f(T) and f(max). The peak f(T) is higher than 600 GHz with SB height ranging from 0.2eV to 0.3eV. It is found that gate voltage has a significant influence on f(T) and f(max) of UTB SB-MOSFETs whereas the barrier height is of minor importance. However, both gate voltage and SB height affect the g(m) and g(ds) obviously. For high performance of UTB SB-MOSFETs, appropriate gate voltage and SB height is of great importance.