A PHYSICS-BASED CRYSTALLIZATION MODEL FOR RETENTION IN PHASE-CHANGE MEMORIES

被引：8
|
作者：
Russo, U. [1 ]
Ielmini, D. [1 ]
Lacaita, A. L. [1 ,2 ]
机构：
[1] Politecn Milan, Dipartimento Elett & Informatz, Piazza L Vinci 32, I-20133 Milan, Italy
[2] Politecn Milan, CNR, Ist Fotochim Nanotecnol IFN, I-20133 Milan, Italy
来源：
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年
关键词：
Phase Change Memory; chalcogenide; data retention;
D O I：
10.1109/RELPHY.2007.369949
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
A new model for data retention in phase-change memory cells is proposed. The model describes the formation of crystalline grains in the amorphous phase according to the standard nucleation theory. A conduction percolation concept is then applied to calculate the crystallization time for the cell. The model is used to account for the experimentally extracted nucleation/growth parameter and to provide a physics-based extrapolation method to predict retention lifetime at relatively low temperature. The sensitivity of the extrapolated results on different approximations for the Gibbs free energy of amorphous-to-crystalline transition and to material-related crystallization parameters is finally analyzed.
引用
收藏
页码：547 / +
页数：3
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