Characterizing the voltage fluctuations driven by a cluster of ligand-gated channels

被引：3
|
作者：
Wang, Jia-Zeng [1 ]
Fan, Yan-Hua [1 ]
机构：
[1] Beijing Technol & Business Univ, Sch Math & Stat, Beijing 100048, Peoples R China
来源：
PHYSICAL REVIEW E | 2021年 / 103卷 / 05期
关键词：
THRESHOLD FLUCTUATIONS; NOISE; POTENTIALS;
D O I：
10.1103/PhysRevE.103.052401
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
In this paper we present the properties of the voltage fluctuations driven by a cluster of ligand-gated channels. First, the second-order moment of the voltage is expressed in form of the integrated resistance and the random force. Then the power spectrum of the voltage noise is obtained analytically, and it is proved to have the 1/d form. Its mechanism lies in that the randomness of the voltage fluctuation is weaker than channel (conductance) noise, which can be approximately described by the Ornstein-Ulenbeck process.
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页数：10
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