Photoelectrical properties of Ba1-xLaxTiO3 thin-film resistor

被引：4
|
作者：
Li, B
Lai, PT
Li, GQ
Zeng, SH
Huang, MQ
机构：
[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
[2] S China Univ Technol, Dept Appl Phys, Guangzhou, Peoples R China
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 86卷 / 03期
关键词：
Ba1-xLaxTiO3 thin film; photosensitivity; optical properties;
D O I：
10.1016/S0924-4247(00)00438-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin Ba1-xLaxTiO3 film is deposited on a SiO2/Si substrate by argon ion-beam sputtering technique. The optical and photoelectrical properties of the film are studied. The optical absorption spectrum of the film is measured and the bandgap of the film is then determined. Effects of applied voltage and illumination intensity on photocurrent of thin-film resistors with different spacing lengths are investigated, and results show that devices with shelter spacing have more linear I-V characteristics. Moreover. a Study Of heat treatment in O-2 on the dark current of the resistor is performed, revealing that a heat treatment at 400 degreesC for an optimal time of 10 min can greatly improve the photosensitivity of the resistor by reducing its dark current. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：226 / 230
页数：5
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