Design and application of ferroelectric memory based nonvolatile SRAM

被引：0

作者：

Masui, S ^{[1
]}

Ninomiya, T

Ohkawa, T

Oura, M

Horii, Y

Kin, N

Honda, K

机构：

[1] Fujitsu Labs Ltd, Kawasaki, Kanagawa 2118588, Japan

[2] Fujitsu Ltd, Kawasaki, Kanagawa 2118588, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2004年 / E87C卷 / 11期

关键词：

ferroelectric material; nonvolatile memory; programming; SoC; programmable logic devices;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Circuit techniques to realize stable recall operation and virtually unlimited read/program cycle operations in ferroelectric memcry based nonvolatile (NV) SRAM composed of six-transistor and fourferroelectric capacitor cells have been developed. Unlimited program cycle operation independent of ferroelectric material characteristics is realized by proper control of plate lines. Reliability evaluation results show that the developed memory cell has sufficient operation margin after stresses of temperature, fatigue, DC bias. Application of NV-SRAM to programmable logic devices has been discussed with a prototype of dynamically programmable gate arrays.

引用

页码：1769 / 1776

页数：8

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