Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

被引：6

作者：

Liu, Gui-Peng ^{[1
]}

Wang, Xin ^{[1
]}

Li, Meng-Nan ^{[2
]}

Pang, Zheng-Peng ^{[1
]}

Tian, Yong-Hui ^{[1
]}

Yang, Jian-Hong ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Inst Microelect, Lanzhou 730000, Peoples R China

[2] China Acad Elect & Informat Technol, Beijing 100041, Peoples R China

来源：

NUCLEAR SCIENCE AND TECHNIQUES | 2018年 / 29卷 / 10期

基金：

中国国家自然科学基金;

关键词：

Proton irradiation; GaN avalanche photodiode (APD); Dark current; Detectors; LOSS NIEL; PERFORMANCE; MODE;

D O I：

10.1007/s41365-018-0480-3

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

The effect of high-energy proton irradiation on GaN-based ultraviolet avalanche photodiodes (APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation-recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.

引用

页数：8

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