High frequency SAW devices on algan:: Fabrication, characterization and integration with optoelectronics

被引：23

作者：

Palacios, T ^{[1
]}

Calle, F ^{[1
]}

Grajal, J ^{[1
]}

Monroy, E ^{[1
]}

Eickhoff, M ^{[1
]}

Ambacher, O ^{[1
]}

Omnès, F ^{[1
]}

机构：

[1] Univ Politecn Madrid, ISOM, ETSI Telecomun, E-28040 Madrid, Spain

来源：

2002 IEEE ULTRASONICS SYMPOSIUM PROCEEDINGS, VOLS 1 AND 2 | 2002年

关键词：

D O I：

10.1109/ULTSYM.2002.1193352

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

In. this paper, the technology and properties of surface acoustic wave (SAW) devices on AlN and GaN films are reviewed. The excellent characteristics of these materials for high frequency applications are demonstrated by the fabrication of SAW filters with central frequencies higher than 2.2 GHz. The thermal behavior of these filters has been analyzed. Finally, the integration of a SAW generator with a metal-semiconductor-metal photodetector is described, showing the important synergy resulting from such integration.

引用

页码：57 / 60

页数：4

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