Spectroscopic detection and characterization of ultrafine defects in semiconductor wafers

被引：0
|
作者：
Nango, N
Ogawa, T
机构：
[1] Ratoc Syst Engn, Tokyo 162, Japan
[2] Gakushuin Univ, Dept Phys, Tokyo 171, Japan
来源：
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997 | 1998年 / 160卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A multi-chroic imaging instrument was developed to study ultrafine defects (UFD) using a dark field imaging system, which includes. few multi-chroic filters to spectrally separate images from the light scattered and/or emitted from the defects. This instrument will simultaneously and independently make images caused by elastic and inelastic light and/or photoluminescence. The instrument incorporates an optical frequency-analyzer to study the nature of the light signal.
引用
收藏
页码：103 / 106
页数：4
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