Analysis of optical constants and temperature-dependent absorption edge of GaS0.75Se0.25 layered crystals

被引:2
|
作者
Isik, Mehmet [1 ]
Gasanly, Nizami [2 ,3 ]
机构
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
[3] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan
关键词
Semiconductors; Chalcogenides; Layered compounds; Crystal growth; Optical properties; SINGLE-CRYSTALS;
D O I
10.1016/j.materresbull.2017.03.025
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
GaS0.75Se0.25 single crystals were optically characterized through transmission and reflection measurements in the wavelength range of 450-1000 nm. Derivative spectrophotometry analyses on temperature dependent transmittance spectra showed that band gap energies of the crystal increase from 239 eV (T=300 K) to 2.53 eV (T=10 K). Band gap at zero temperature, average phonon energy, electron phonon coupling parameter and rates of change of band gap energy with temperature were found from the temperature dependences of band gap energies under the light of different models reported in literature. Furthermore, the dispersion of room temperature refractive index was discussed in terms of single effective oscillator model. The refractive index dispersion parameters, namely oscillator and dispersion energies, zero-frequency refractive index, were determined as a result of analyses. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:280 / 284
页数:5
相关论文
共 42 条
  • [1] Photoluminescence spectra of GaS0.75Se0.25 layered single crystals
    Gasanly, NM
    Goksen, K
    Özkan, H
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2002, 37 (06) : 581 - 586
  • [2] Transmission, reflection and thermoluminescence studies on GaS0.75Se0.25 layered single crystals
    Delice, S.
    Isik, M.
    Gasanly, N. M.
    [J]. MATERIALS RESEARCH BULLETIN, 2015, 70 : 236 - 240
  • [3] Anharmonic line shift and linewidth of the Raman modes in GaS0.75Se0.25 layered crystals
    Gasanly, NM
    Pala, R
    [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2002, 234 (02): : 665 - 673
  • [4] Electrical and photoconductive properties of GaS0.75Se0.25 mixed crystals
    Karabulut, O
    Parlak, M
    Yilmaz, K
    Gasanly, NM
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2005, 40 (03) : 253 - 258
  • [5] Determination of optical constants and temperature dependent band gap energy of GaS0.25Se0.75 single crystals
    Isik, M.
    Gasanly, N.
    [J]. JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2017, 19 (5-6): : 374 - 378
  • [6] Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements
    Isik, M.
    Cetin, S. S.
    Gasanly, N. M.
    Ozcelik, S.
    [J]. SOLID STATE COMMUNICATIONS, 2012, 152 (09) : 791 - 793
  • [7] Photoconductivity and photoluminescence features of gamma-irradiated GaS0.75Se0.25 < Er > single crystals
    Taghiyev, T. B.
    [J]. SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2011, 14 (03) : 362 - 364
  • [8] Determination of optical parameters of Ga0.75In0.25Se layered crystals
    Isik, M.
    Gasanly, N. M.
    [J]. CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (05) : 530 - 534
  • [9] Temperature-dependent absorption edge and photoconductivity of Tl2In2S3Se layered single crystals
    Guler, I.
    Ambrico, M.
    Ligonzo, T.
    Gasanly, N. M.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 550 : 471 - 474
  • [10] Optical Study on Temperature-Dependent Absorption Edge of γ-InSe-Layered Semiconductor
    Wu, Wen-Te
    Tiong, Kwong-Kau
    Tan, Shih-Wei
    Hu, Sheng-Yao
    Lee, Yueh-Chien
    Chen, Ruei-San
    Wu, Chia-Ti
    [J]. APPLIED SCIENCES-BASEL, 2024, 14 (15):