Optical constants of layered structured Ga0.75In0.25Se crystals from the ellipsometric measurements

被引:10
|
作者
Isik, M. [1 ]
Cetin, S. S. [2 ]
Gasanly, N. M. [3 ]
Ozcelik, S. [2 ]
机构
[1] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey
[2] Gazi Univ, Dept Phys, TR-06500 Ankara, Turkey
[3] Middle E Tech Univ, Dept Phys, TR-06800 Ankara, Turkey
关键词
Semiconductors; Optical constants; Ellipsometry; SINGLE-CRYSTALS; ENERGY-BANDS; GASE; INSE;
D O I
10.1016/j.ssc.2012.01.043
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We have carried out the spectroscopic ellipsometry measurements on Ga0.75In0.25Se single crystals in the 1.2-6.0 eV spectral range at room temperature. The optical constants, real and imaginary parts of the dielectric function, refractive index and extinction coefficient, were found as a result of analysis of ellipsometric data. The critical point analysis of the second derivative spectra of the dielectric function revealed four interband transition structures with critical point energy values of 3.19, 3.53, 4.10 and 4.98 eV. The results of the analysis were compared with those of the ellipsometric studies performed on GaSe which is the main constituent of the Ga0.75In0.25Se crystal. The obtained critical point energies are in good agreement with the energies of the GaSe crystal reported in the literature. (C) 2012 Elsevier Ltd. All rights reserved.
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页码:791 / 793
页数:3
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