Annealing effect on CdS/SnO2 films grown by chemical bath deposition

被引：28

作者：

Metin, H. ^{[1
]}

Erat, S. ^{[2
,3
]}

Durmus, S. ^{[4
]}

Ari, M. ^{[4
]}

机构：

[1] Mersin Univ, Dept Phys, TR-33343 Ciftlikkoy, Mersin, Turkey

[2] EMPA Swiss Fed Labs Mat Testing & Res, Lab High Performance Ceram, CH-8600 Dubendorf, Switzerland

[3] ETH Zurich Swiss Fed Inst Technol, Dept Mat, CH-8053 Zurich, Switzerland

[4] Erciyes Univ, Dept Phys, Kayseri, Turkey

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 16期

关键词：

CdS; SnO2; Optical properties; Electrical properties; CDS THIN-FILMS; ELECTRICAL-PROPERTIES; PHYSICAL-PROPERTIES; SOLAR-CELLS; CBD; TEMPERATURE; CONDUCTION; SUBSTRATE; PROGRESS;

D O I：

10.1016/j.apsusc.2010.03.063

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The extensive investigation of the annealing effect in nitrogen atmosphere on the structural optical and electrical properties of chemically deposited CdS films on SnO2 has been performed. The as-deposited film shows 2.45 eV band gap (E-g) and decreases with increasing annealing temperature. The film annealed at 623 K having pure hexagonal phase (a = 4.14 angstrom, c = 6.71 angstrom for [1 0 0] plane) and E-g = 2.36 eV shows 10 times higher conductivity for all temperature range, and shows two different activation energies E-a = 0.114 eV and E-a = 0.033 eV for the temperature range 395 K <= T <= 515 K and 515 K <= T <= 585 K, respectively. The structural parameters such as dislocation density, strain and optical parameters such as absorption and extinction coefficient are calculated and compared for all the films. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：5076 / 5081

页数：6

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