Comparison of two-dimensional electron gas of etched and unetched InAlAs/InGaAs/InAlAs metamorphic high electron mobility transistor structures

被引：1

作者：

Wu, J. S. ^{[1
]}

Hung, C. C. ^{[1
]}

Lu, C. T. ^{[1
]}

Lin, D. Y. ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Elect Engn, Changhua 500, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 04期

关键词：

Photoluminescence; Hall; Photo-Hall; Metamorphic high electron mobility transistor; Two-dimensional electron gas; PHOTOLUMINESCENCE;

D O I：

10.1016/j.physe.2009.11.113

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present the photoluminescence (PL) and Hall studies on the two-dimensional electron gas (2DEG) of etched and unetched In0.5Al0.5As/In0.5Ga0.5As metamorphic high electron mobility transistor (mHEMT) structures. The PL technique is shown to be capable of extracting the 2DEG sheet carrier concentration in a complete mHEMT structure directly without making contacts or processing, while the Hall measurement gives a substantially higher concentration due to the parallel conduction of the heavily doped cap layer. We also report a new frequency-dependent photo-Hall technique to obtain the absorption coefficient of the In0.5Ga0.5As quantum-well channel layer. (c) 2009 Elsevier B.V. All rights reserved.

引用

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页码：1212 / 1215

页数：4

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