Effect on Ordering of the Growth of GaInP Layers on (111)-GaAs Faces

被引：3

作者：

Martinez, O. ^{[1
]}

Hortelano, V. ^{[1
]}

Jimenez, J. ^{[1
]}

Parra, V. ^{[2
]}

Pelosi, C. ^{[3
]}

Attolini, G. ^{[3
]}

Prutskij, T. ^{[4
]}

机构：

[1] GdS Optronlab, Dpto Fis Mat Condensada, Valladolid 47011, Spain

[2] Grp Pevafersa, Toro 49800, Zamora, Spain

[3] IMEM CNR, I-43100 Parma, Italy

[4] BUAP, Inst Ciencias, Puebla 72000, Mexico

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 06期

关键词：

GaInP; III-V solar cells; Cu-Pt ordering effects; micro-Raman; luminescence; CONCENTRATOR SOLAR-CELLS; STRAIN;

D O I：

10.1007/s11664-010-1178-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaInP, an essential material for multijunction structures of III-V compounds for solar cells, can achieve better photovoltaic responses when grown on (111)GaAs faces, due to the large internal electric fields generated by the off-diagonal strain. In this work, we explored metalorganic chemical vapor deposition growth of GaInP layers on (001)-, (111)Ga-, and (111)As-GaAs substrates, using different phosphine flow rates. The structural and optical properties of the layers have been studied by micro-Raman spectroscopy, microphotoluminescence, and cathodoluminescence. Problems such as composition control, growth rate, and the presence of ordered phases are addressed.

引用

页码：671 / 676

页数：6

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