A multilevel parasitic interconnect capacitance modeling and extraction for reliable VLSI on-chip clock delay evaluation

被引:7
|
作者
Lee, M [1 ]
机构
[1] Texas Instruments Inc, Digital Compress Prod, Dallas, TX 75243 USA
关键词
input slew effect; interconnect capacitance models; interconnect parasitic extraction; on-chip capacitive coupling; traversal clock net delay;
D O I
10.1109/4.663574
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes fringing and coupling interconnect capacitance models which include the nonlinear second-order effects of field interactions among multilevel parasitic interconnects for accurate circuit simulations, They are fitted nell with numerical solutions by using a Poisson equation solver, A reliable parasitic distributed resistance-inductance-capacitance (RLC) extraction method is identified by using the solver with the bounded local three-dimensional (3-D) numerical analysis to reduce excessive central processing unit (CPU) time compared to full 3-D numerical simulation. We investigate the impact of input slew variations on the traversal clock delay within the slow ramp region of the driver gate as well as in the extracted parasitic interconnect networks. Input slew is found to be a dominant factor affecting clock delay sensitivity, In addition, we use indirect on-chip electron beam probing to confirm that the simulated clock delays are in reasonable agreement with the measured delays.
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页码:657 / 661
页数:5
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