W18O49 Nanowires as Ultraviolet Photodetector

被引:23
|
作者
Yang, Feng [1 ]
Huang, Kai [1 ]
Ni, Shibing [1 ]
Wang, Qi [1 ]
He, Deyan [1 ]
机构
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
来源
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 02期
基金
中国国家自然科学基金;
关键词
W18O49; nanowires; Field effect transistor; Ultraviolet photodetector; Photoconductive gain; Near-surface depletion region;
D O I
10.1007/s11671-009-9499-z
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Photodetectors in a configuration of field effect transistor were fabricated based on individual W18O49 nanowires. Evaluation of electrical transport behavior indicates that the W18O49 nanowires are n-type semiconductors. The photodetectors show high sensitivity, stability and reversibility to ultraviolet (UV) light. A high photoconductive gain of 10(4) was obtained, and the photoconductivity is up to 60 nS upon exposure to 312 nm UV light with an intensity of 1.6 mW/cm(2). Absorption of oxygen on the surface of W18O49 nanowires has a significant influence on the dark conductivity, and the ambient gas can remarkably change the conductivity of W18O49 nanowire. The results imply that W18O49 nanowires will be promising candidates for fabricating UV photodetectors.
引用
收藏
页码:416 / 419
页数:4
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