SrTiO3 Thin Film Decoupling Capacitors on Si Interposers for 3D System Integration

被引:0
|
作者
Takemura, Koichi [1 ]
Kikuchi, Katsuya [2 ]
Ueda, Chihiro [3 ]
Baba, Kazuhiro [1 ]
Aoyagi, Masahiro [2 ]
Otsuka, Kanji [3 ]
机构
[1] Assoc Super Adv Elect Technol, 1120 Shimokuzawa, Kanagawa 2291198, Japan
[2] Natl Inst Adv Ind Sci & Technol, AIST Tsukuba Cent 2, Tsukuba, Ibaraki 3058561, Japan
[3] Meisei Univ, Hino, Tokyo 1918506, Japan
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中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Simultaneous switching noise (SSN) suppression is a serious problem when operating 3-dimentional large-scale integrated circuits (3D LSIs). Thin film capacitors directly connected to LSIs using 3D integration technology are expected to reduce impedance for a power distribution network (PDN). We fabricated various multi-terminal 10 x 10 mm SrTiO3 thin film capacitors with the capacitance values larger than 1 mu F, and explored the impedance in a high frequency region. The equivalent series resistance (ESR) and equivalent series inductance (ESL) values for the metal-insulator-metal (NEW) capacitors are affected by the number of contacts. Typically, the ESR values are less than I m Omega and the ESL values are estimated to be a few pH. The SrTiO3 NUM capacitors on Si interposers are suitable for reducing both self- and transfer-impedance of a PDN for 3D-LSIs.
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页码:165 / +
页数:2
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