Interfacial phenomena during depth profiling with gallium ions: a ToF-SIMS approach

被引：0
|
作者：
Licciardello, A [1 ]
Renna, L [1 ]
Pignataro, S [1 ]
机构：
[1] Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy
来源：
SURFACE AND INTERFACE ANALYSIS | 2000年 / 30卷 / 01期
关键词：
ToF-SIMS; depth profiling; self-implantation; segregation; SiO2/Si interface;
D O I：
10.1002/1096-9918(200008)30:1<243::AID-SIA754>3.0.CO;2-I
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Time-of-flight SIMS profiles have been obtained on an SiO2/Si system. A dual ion beam experimental set-up has been used in order to decouple the erosion process due to an Ar+ beam from the analysis done by a Ga+ beam. The Ga+ yield shows a characteristic double-peaked structure at the SiO2/Si interface. It is shown that the peak at shallower depth can be accounted for by a change in sputtering rate, whereas that located at the interface can be interpreted in terms of gallium segregation. Copyright (C) 2000 John Wiley & Sons, Ltd.
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收藏
页码：243 / 246
页数：4
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