10.3% efficient Cu(In, Ga)Se2 solar cells fabricated by selenization of Cu-In-Ga precursors

被引：10
|
作者：
Hu, Junxia [1 ]
Cheng, Ke [1 ]
Han, Kaikai [1 ]
Kuang, Zhongcheng [1 ]
Liu, Jingling [1 ]
Hu, Binbin [1 ]
Tian, Qingwen [1 ]
Wu, Sixin [1 ]
Du, Zuliang [1 ]
机构：
[1] Henan Univ, Key Lab Special Funct Mat, Minist Educ, Collaborat Innovat Ctr Nano Funct Mat & Applicat, Kaifeng 475004, Henan Province, Peoples R China
来源：
MATERIALS LETTERS | 2016年 / 174卷
基金：
中国国家自然科学基金;
关键词：
Sputtering; Energy storage and conversion; Intermetallic alloys and compounds; Solar energy materials; THIN-FILMS;
D O I：
10.1016/j.matlet.2016.02.123
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, Cu-In-Ga precursor films are fabricated by one-step direct current (DC) sputtering of single ternary alloy target. After the post-selenization by rapid thermal processing (RTP), chalcopyrite-type Cu (In, Ga)Se-2 absorber layers in pure phase are obtained. Energy dispersive X-ray spectroscopy (EDS) results reveals that the Cu(In, Ga)Se-2 absorber layer is in a Cu-poor stoichiometry. Standard soda lime glass (SLG)/Mo/CIGS/CdS/i-ZnO/ITO/Ag grid structural solar cells are fabricated. A highest conversion efficiency of 10.33% with a V-oc 450 mV, a J(sc), of 37.5 mA/cm(2) and a FF of 61.3% without antireflection coating has been achieved. Our results demonstrate the selenization of Cu-In-Ga precursors sputtered from a single ternary target is a promising strategy for developing high efficient Cu(ln, Ga)Se-2 thin film solar cells. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：114 / 117
页数：4
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