Polarization insensitive Ge-rich silicon germanium waveguides for optical interconnects on silicon

被引：0

作者：

Vakarin, V. ^{[1
]}

Chaisakul, Papichaya ^{[1
]}

Frigerio, Jacopo ^{[2
]}

Ballabio, Andrea ^{[2
]}

Ramirez, Joan Manel ^{[1
]}

Le Roux, Xavier ^{[1
]}

Coudevylle, Jean-Rene ^{[1
]}

Vivien, Laurent ^{[1
]}

Isella, Giovanni ^{[2
]}

Marris-Morini, Delphine ^{[1
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol,Orsay C2N, F-91405 Orsay, France

[2] Politecn Milan, Dipartimento Fis, L NESS, Via Anzani 42, I-22100 Como, Italy

来源：

INTEGRATED OPTICS: PHYSICS AND SIMULATIONS III | 2017年 / 10242卷

基金：

欧洲研究理事会;

关键词：

Silicon photonics; Germanium; Waveguide; polarization insensitive; MMI; ELECTROABSORPTION MODULATOR; ON-INSULATOR; HIGH-SPEED; LOW-POWER; PHOTODETECTOR;

D O I：

10.1117/12.2265431

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We propose germanium-rich silicon germanium waveguides as a basic building block for polarization insensitive circuitry on silicon. In this work a detailed study of SiGe waveguides geometries is performed to find optimal parameters to simultaneously obtain low polarization sensitivity and single mode operation at lambda=1.55 mu m. The polarization dependence of the effective index, group index and dispersion coefficient is investigated. Optimized geometries are tolerant to fabrication errors and can be realized with the current state of the art CMOS technology. As a next step polarization insensitive multimode interference structures have been designed.

引用

页数：8

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