Monolithic pyroelectric infrared image sensor using PVDF thin film

被引：74
|
作者：
Fujitsuka, N
Sakata, J
Miyachi, Y
Mizuno, K
Ohtsuka, K
Taga, Y
Tabata, O
机构：
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 48011, Japan
[2] Ritsumeikan Univ, Dept Mech Engn, Shiga 52577, Japan
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1998年 / 66卷 / 1-3期
关键词：
infrared; micromachining; pyroelectric; PVDF; sensors;
D O I：
10.1016/S0924-4247(98)00050-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 16x16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP)-deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried-channel MOSFET as a low-noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure. A voltage sensitivity of 6600 V W-1 and a detectivity of 1.6 x 10(7) cm Hz(1/2) W-1 have been realized with a sensing area of 75 mu m x 75 mu m (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：237 / 243
页数：7
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