Monolithic pyroelectric infrared image sensor using PVDF thin film

被引：0
|
作者：
Fujitsuka, N
Sakata, J
Miyachi, Y
Mizuno, K
Ohtsuka, K
Taga, Y
Tabata, O
机构：
来源：
TRANSDUCERS 97 - 1997 INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS AND ACTUATORS, DIGEST OF TECHNICAL PAPERS, VOLS 1 AND 2 | 1997年
关键词：
pyroelectric; infrared; sensor;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 16 x 16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600 V/W and a detectivity of 1.6 x 10(7) cmHz(1/2)W(-1) have been realized with a sensing area of 75 x 75 mu m(2).
引用
收藏
页码：1237 / 1240
页数：4
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