Modeling and filtering of optical emission spectroscopy data for plasma etching systems

被引:2
|
作者
Rangan, S [1 ]
Spanos, C [1 ]
Poolla, K [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
关键词
D O I
10.1109/ISSM.1997.664507
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Full-spectrum in situ optical emission spectroscopy (OES) has emerged as a promising technology for in-line sensor systems for plasma etching process control. In this paper, we present a novel empirical model-based approach for OES data filtering based on statistical principal component analysis and jump linear filtering. The modeling procedure is demonstrated on a commercial multilayer Al/TiN/SiO2 etch process. For this process, we show that the proposed model provides a succinct representation of the OES signals and is in excellent agreement with the experimental data.
引用
收藏
页码:B41 / B44
页数:4
相关论文
共 50 条
  • [1] Modeling and filtering of optical emission spectroscopy data for plasma etching systems
    Rangan, S
    Spanos, C
    Poolla, K
    PROCEEDINGS OF THE 1997 AMERICAN CONTROL CONFERENCE, VOLS 1-6, 1997, : 627 - 628
  • [2] Plasma Etching Process Monitoring with Optical Emission Spectroscopy
    Wang Wei
    Bi Junjie
    Zhao Junpeng
    2009 INTERNATIONAL CONFERENCE ON INDUSTRIAL MECHATRONICS AND AUTOMATION, 2009, : 45 - 47
  • [3] Neural network modeling of reactive ion etching using optical emission spectroscopy data
    Hong, SJ
    May, GS
    Park, DC
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2003, 16 (04) : 598 - 608
  • [4] ENDPOINT DETECTION IN PLASMA-ETCHING BY OPTICAL-EMISSION SPECTROSCOPY
    HIROBE, K
    TSUCHIMOTO, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) : 234 - 235
  • [5] OPTICAL-EMISSION SPECTROSCOPY OF PLASMA-ETCHING OF GAAS AND INP
    LAW, VJ
    JONES, GAC
    RITCHIE, DA
    TEWORDT, M
    MICROELECTRONIC ENGINEERING, 1993, 21 (1-4) : 337 - 340
  • [6] Plasma etch modeling using optical emission spectroscopy
    J Vac Sci Technol A, 3 pt 2 (1901):
  • [7] Plasma etch modeling using optical emission spectroscopy
    Chen, RW
    Huang, H
    Spanos, CJ
    Gatto, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03): : 1901 - 1906
  • [8] SPATIALLY RESOLVED OPTICAL SPECTROSCOPY OF PLASMA-ETCHING SYSTEMS
    FIELD, D
    HYDES, AJ
    KLEMPERER, DF
    VACUUM, 1984, 34 (3-4) : 347 - 349
  • [9] Optical emission spectroscopy for diagnosis of diamond growth and etching processes in microwave plasma
    Yurov, V. Yu.
    Bushuev, E. V.
    Bolshakov, A. P.
    Antonova, I. A.
    Ralchenko, V. G.
    Konov, V. I.
    10TH INTERNATIONAL WORKSHOP 2017 STRONG MICROWAVES AND TERAHERTZ WAVES: SOURCES AND APPLICATIONS, 2017, 149
  • [10] Neural network modeling of reactive ion etching using principal component analysis of optical emission spectroscopy data
    Hong, SJ
    May, GS
    2002 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: ADVANCING THE SCIENCE OF SEMICONDUCTOR MANUFACTURING EXCELLENCE, 2002, : 415 - 420