ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy

被引：88
|
作者：
Ogata, K [1 ]
Koike, K
Tanite, T
Komuro, T
Yan, F
Sasa, S
Inoue, M
Yano, M
机构：
[1] Osaka Inst Technol, Bio Venture Ct5r, Asahi Ku, Osaka 5358585, Japan
[2] Osaka Inst Technol, New Mat Res Ctr, Osaka 5358585, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期
关键词：
photoluminescence; reflection high energy electron diffraction; molecular beam epitaxy; oxides; semiconducting II-VI materials; biosensor;
D O I：
10.1016/S0022-0248(02)02277-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Growth of ZnO and ZnMgO layers by molecular beam epitaxy was conducted toward biosensing application. Oxygen polar (-c) ZnO layers were grown with oxygen termination, while irradiation of Zn beam made the Zn-terminated surface. Luminescent energy of ZnMgO shifted as high as 3.65 eV by increasing Mg composition. Electron carrier densities and mobilities of ZnO and ZnMgO were around 3 x 10(17) cm(-3) and 100 cm(2)/V s, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：623 / 627
页数：5
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