Advanced scanning near-field optical microscopy of semiconducting materials and devices

被引：0

作者：

Cramer, RM ^{[1
]}

Heiderhoff, R ^{[1
]}

Selbeck, J ^{[1
]}

Balk, LJ ^{[1
]}

机构：

[1] Berg Univ Gesamthsch Wuppertal, Lehrstuhl Elekt, D-42097 Wuppertal, Germany

来源：

MICROSCOPY OF SEMICONDUCTING MATERIALS 1997 | 1997年 / 157期

关键词：

D O I：

暂无

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

In this work we demonstrate the application of near-field optical techniques for high-resolution optical beam induced current (OBIC) and cathodoluminescence (CL) measurements. For the OBIC setup, a small aperture at the apex of an optical fiber is used as a nanoscopical light source for the excitation of electron-hole-pairs. Near-field detection cathodoluminescence analyses are carried out by means of an SEM-SNOM hybrid system, where the sample is homogeneously irradiated by a high energy electron beam while the emitted light is locally detected in the near-field.

引用

页码：685 / 688

页数：4

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