Complementary Skyrmion Racetrack Memory With Voltage Manipulation

被引：70

作者：

Kang, Wang ^{[1
]}

Zheng, Chentian ^{[2
]}

Huang, Yangqi ^{[2
]}

Zhang, Xichao ^{[3
]}

Zhou, Yan ^{[3
]}

Lv, Weifeng ^{[1
]}

Zhao, Weisheng ^{[2
]}

机构：

[1] Beihang Univ, Sch Comp Sci & Engn, Spintron Interdisciplinary Ctr, Beijing 100191, Peoples R China

[2] Beihang Univ, Sch Elect Engn, Fert Beijing Inst, Spintron Interdisciplinary Ctr, Beijing 100191, Peoples R China

[3] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 07期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

Magnetic skyrmion; domain wall; racetrack memory; voltage manipulation; MOTION; CONVERSION;

D O I：

10.1109/LED.2016.2574916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size, and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall. However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation, and synchronization. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

引用

下载

页码：924 / 927

页数：4

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