Magnetophonon resonance in quantum wells due to absorption and emission of confined phonon

被引:29
|
作者
Nguyen Dinh Hien [1 ,2 ]
机构
[1] Ton Duc Thang Univ, Lab Magnetism & Magnet Mat, Adv Inst Mat Sci, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Appl Sci, Ho Chi Minh City, Vietnam
关键词
Quantum wells; Optically detected magnetophonon resonance; FWHM; Confined phonons; ASSISTED CYCLOTRON-RESONANCE; SCATTERING RATES; OPTICAL PHONONS; ELECTRON; LINEWIDTH; ENERGY; WIRE;
D O I
10.1016/j.physe.2019.113608
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, the effect of confined phonons described by the Huang-Zhu model, Ridley's guided mode model, and Fuchs-Kliewer slab mode model on the full-width at half-maximum (FWHM) of the optically detected magnetophonon resonance (ODMPR) peak for the inter-subband transitions (1-2) with the absorption/emission of phonon in GaAs quantum wells is investigated by using the projection operator method. The ODMPR conditions depend on the photon energy and well width are presented. Our numerical results show that the FWHM of the ODMPR peak for the inter-subband transitions with the absorption/emission of phonon increases with the growing temperature and decreases with the rise of well width for all models of phonons. Besides, the FWHM of the above ODMPR peaks for the bulk phonons has a smaller value and changes slower than it does for the confined phonons. The FWHM for the Huang-Zhu model is largest among three models of confined phonons (Huang-Zhu model, Ridley's guided mode model, and Fuchs-Kliewer slab mode model), while it for Ridley's guided mode model is smallest. This result is in good agreement with the theoretical results in Refs. [1-3]. In addition, the FWHM of the ODMPR peak for the inter-subband transitions with the emission of phonon has a smaller value than that for absorption of phonon for both the bulk and confined phonons. This result is in good agreement with the theoretical results in Ref. [4] but very different from that the theoretical results in Refs. [5,6].
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页数:5
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