Enhanced UV-visible photoresponsivity of annealed Al plus Au/n-ZnO:p-Si heterojunction self-powered photodiode

被引：1
|
作者：
Sarmah, S. [1 ,2 ]
Das, M. [1 ]
Sarma, Bimal K. [3 ]
Sarkar, D. [1 ]
机构：
[1] Gauhati Univ, Dept Phys, CMP Res Lab, Gauhati 781014, Assam, India
[2] GL Choudhury Coll, Dept Phys, Barpeta Rd, Barpeta 781315, Assam, India
[3] Gauhati Univ, Dept Phys, Nanophys Lab, Gauhati 781014, Assam, India
来源：
MATERIALS LETTERS | 2022年 / 316卷
关键词：
Semiconductors; Sputtering; Photodiode; Annealing;
D O I：
10.1016/j.matlet.2022.132040
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Present brief communication reports photo sensing performances of the annealed Al+Au/n-ZnO:p-Si photodiode (PD). The PD can be operated in self-powered mode, as even under no applied bias condition, it exhibits switching on/off ratio and photoresponsivity up to 4.2 and 25 mAW(-1) respectively for the device annealed at 200 degrees C. On increasing the annealing temperature to 400 degrees C, it exhibits better photoresponsivity and faster switching behaviours.
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页数：4
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