A Low power UWB CMOS Low Noise Amplifier for 3.1-10.6 GHz in Receivers

被引：0
|
作者：
Mahdavi, Amir [1 ]
Geran, Fatemeh [1 ]
机构：
[1] Shahid Rajaee Teacher Training Univ, Fac Elect Engn, Tehran, Iran
来源：
2016 8TH INTERNATIONAL SYMPOSIUM ON TELECOMMUNICATIONS (IST) | 2016年
关键词：
Low noise amplifier; Low power; Noise figure; LNA;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
An ultra-wideband (UWB) low noise amplifier (LNA) with low power is presented in this paper. The proposed circuit is common gate and cascode topology that the power consumption, input and output impedance matching are optimized. Simulation results show that maximum gain and noise figure are 22.1dB and 2.4-2.9dB over a 3.1-10.6 GHz, respectively. Power consumption of the LNA core, buffer power and IIP3 are 7.7 mW, 1.3 mW with 1.8 V supply and -9dBm respectively. The wideband input impedance matching of LNA is obtained by employing a degenerating inductor (|S-11|<-7.5 dB). The circuit proposed UWB LNA is implemented using 0.18 mu m based CMOS technology under TSMC.
引用
收藏
页码：596 / 600
页数：5
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